Imaging device

ABSTRACT

An imaging device including a semiconductor substrate having a surface, the semiconductor substrate including a first region of a first conductivity type and a pixel. The pixel includes a photoelectric converter; a first transistor including a second region of a second conductivity type different from the first conductivity type as a source or a drain and a first electrode as a gate, the second region being located in the semiconductor substrate and being adjacent to the first region, the first electrode being located above the surface; a contact plug coupled to the second region; and a second electrode located above the surface; wherein when seen in a direction perpendicular to the surface, a contact point between the contact plug and the second region is located between the first electrode and the second electrode.

RELATED APPLICATIONS

This application is a Continuation of U.S. patent application Ser. No.15/851,238 filed on Dec. 21, 2017, now U.S. Pat. No. 10,062,726, whichis a Continuation of U.S. patent application Ser. No. 15/418,662 filedon Jan. 27, 2017, now U.S. Pat. No. 9,881,967, which in turn claims thebenefit of Japanese Application No. 2016-034632, filed on Feb. 25, 2016,the entire disclosures of which Applications are incorporated byreference herein.

BACKGROUND 1. Technical Field

The present disclosure relates to an imaging device.

2. Description of the Related Art

Digital cameras and the like typically include charge coupled device(CCD) image sensors and complementary metal oxide semiconductor (CMOS)image sensors. As is well known, these image sensors include photodiodesformed on a semiconductor substrate.

On the other hand, there is proposed a configuration in which aphotoelectric converter including a photoelectric conversion layer isdisposed above a semiconductor substrate (for example, see JapaneseUnexamined Patent Application Publication No. 2009-164604 andInternational Publication No. 2012/147302). An imaging device havingsuch a configuration may be called a stacked imaging device. In astacked imaging device, charge generated by photoelectric conversion isstored in a charge storage region (also referred to as floatingdiffusion). Signals in accordance with the amount of charge stored inthe charge storage region are read out through a CCD circuit or a CMOScircuit formed on the semiconductor substrate.

SUMMARY

In a stacked imaging device, a leak current from a charge storage regionor a leak current to a charge storage region may degrade an image to beobtained. It is useful if such a leak current can be reduced.Hereinafter, this leak current may also be referred to as a darkcurrent.

In one general aspect, the techniques disclosed here feature an imagingdevice including a semiconductor substrate having a surface, thesemiconductor substrate including a first region of a first conductivitytype and a pixel. The pixel includes a photoelectric converter; a firsttransistor including a second region of a second conductivity typedifferent from the first conductivity type as a source or a drain and afirst electrode as a gate, the second region being located in thesemiconductor substrate and being adjacent to the first region, thefirst electrode being located above the surface; a contact plug coupledto the second region; and a second electrode located above the surface;wherein when seen in a direction perpendicular to the surface, a contactpoint between the contact plug and the second region is located betweenthe first electrode and the second electrode.

General or specific embodiments may be implemented as an element, adevice, a module, or a system. In addition, general or specificembodiments may be implemented as any combination of an element, adevice, a module, and a system.

Additional benefits and advantages of the disclosed embodiments willbecome apparent from the specification and drawings. The benefits and/oradvantages may be individually obtained by the various embodiments andfeatures of the specification and drawings, which need not all beprovided in order to obtain one or more of such benefits and/oradvantages.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates an exemplary circuit configuration of an imagingdevice according to a first embodiment of the present disclosure;

FIG. 2 is a schematic cross-sectional view illustrating a typicalexample of a device configuration of a unit pixel cell;

FIG. 3 is a plan view illustrating an exemplary layout of elements inthe unit pixel cell when seen from a normal direction of a semiconductorsubstrate;

FIG. 4 is an enlarged schematic cross-sectional view illustrating avicinity of a reset transistor in the state where 0 V is applied to acontrol electrode and a gate electrode;

FIG. 5 is an enlarged schematic cross-sectional view illustrating thevicinity of the reset transistor in the state where a negative voltageis applied to the control electrode and the gate electrode;

FIG. 6 is a plan view illustrating a layout of elements in a unit pixelcell according to a modification of the first embodiment;

FIG. 7 is an enlarged schematic cross-sectional view illustrating avicinity of the reset transistor in the state where negative voltagesare applied to the gate electrode and the control electrode;

FIG. 8 is a plan view illustrating a layout of elements in a unit pixelcell according to another modification of the first embodiment;

FIG. 9 is an enlarged schematic cross-sectional view illustrating avicinity of the reset transistor and another reset transistor in thestate where a negative voltage is applied to the gate electrode of thereset transistor and a gate electrode of the other reset transistor;

FIG. 10 is a plan view illustrating an exemplary layout of elements in aunit pixel cell according to a second embodiment of the presentdisclosure;

FIG. 11 is an enlarged schematic cross-sectional view illustrating avicinity of a reset transistor in the state where a negative voltage isapplied to a gate electrode;

FIG. 12 is a graph illustrating a relationship between each voltageapplied to a gate electrode of a reset transistor and a dark current;

FIG. 13 is a plan view schematically illustrating an electrode structureaccording to a comparative example in which a control electrode is notincluded;

FIG. 14 is a plan view schematically illustrating an electrode structurein which a control electrode and a gate electrode are disposed so as toface each other with a contact plug interposed therebetween to beelectrically connected to each other;

FIG. 15 is a plan view schematically illustrating an electrode structurein which a contact plug is located inside an opening of a ring-shapedgate electrode;

FIG. 16 illustrates an exemplary circuit configuration of a unit pixelcell in an imaging device according to a third embodiment of the presentdisclosure;

FIG. 17 is a schematic cross-sectional view illustrating an exemplarydevice configuration of the unit pixel cell illustrated in FIG. 18;

FIG. 18 is a plan view illustrating an exemplary layout of elements inthe unit pixel cell;

FIG. 19 is a plan view illustrating a layout of elements according to amodification of the unit pixel cell according to the third embodiment;

FIG. 20 is a plan view illustrating a layout of elements according toanother modification of the unit pixel cell according to the thirdembodiment;

FIG. 21 is a plan view illustrating another example of a contour of thegate electrode; and

FIG. 22 is an enlarged schematic cross-sectional view illustrating avicinity of a reset transistor in a unit pixel cell according to stillanother modification in which a negative voltage is applied to a controlelectrode and a gate electrode of the reset transistor.

DETAILED DESCRIPTION

A stacked imaging device typically includes a connector thatelectrically connects a photoelectric converter to a reading circuitformed on a semiconductor substrate. Various p-n junctions are formed inthe periphery of the contact between the semiconductor substrate and theconnector. A depletion layer is formed in the vicinity of these p-njunctions. Recombination of charge in the depletion layer in thevicinity of the p-n junctions may generate a leak current. Inparticular, a depletion layer in the vicinity of the surface of thesemiconductor substrate markedly affects the generation of a leakcurrent. The inventors have found out that the area of a depletion layerthat appears in the vicinity of the surface of the semiconductorsubstrate can be reduced by employing an electrode configuration that isformed to surround the contact between the semiconductor substrate andthe connector.

A summary of an embodiment of the present disclosure is as follows.

Item 1

An imaging device including a plurality of unit pixel cells, in whicheach of the plurality of unit pixel cells includes

a semiconductor substrate including a first region having a firstconductivity type and an impurity region having a second conductivitytype, the impurity region being formed in the first region,

a photoelectric converter disposed above the semiconductor substrate,

a wire structure disposed between the semiconductor substrate and thephotoelectric converter, the wire structure including a contact plugthat is connected to the impurity region,

a first transistor that includes a first insulation layer on thesemiconductor substrate and

a first control electrode on the first insulation layer, and

a second control electrode disposed on a second insulation layer that isformed in the same layer as the first insulation layer, in which

the first transistor includes the impurity region as one of a source anda drain, in which at least a part of the impurity region is located inthe surface of the semiconductor substrate, and in which

when seen in a direction perpendicular to the semiconductor substrate, apart of the impurity region contacting the contact plug is locatedbetween the first control electrode and the second control electrode.

According to the configuration of Item 1, it is possible to reduce thearea of a depletion region in the surface of the semiconductorsubstrate.

Item 2

The imaging device according to Item 1, in which the first controlelectrode and the second control electrode are formed in the same layer,and

the first control electrode and the second control electrode aredisposed to be symmetrical about the part of the impurity regioncontacting the contact plug.

According to the configuration of Item 2, it is possible to moreeffectively reduce the area of the depletion region in the surface ofthe semiconductor substrate.

Item 3

The imaging device according to Item 1 or 2, in which the impurityregion includes a low-concentration region where an impurityconcentration is relatively low and a high-concentration region disposedwithin the low-concentration region, and in which

the contact plug is connected to the high-concentration region.

According to the configuration of Item 3, it is possible to reduce acontact resistance.

Item 4

The imaging device according to any one of Items 1 to 3, including apower line with which a reset voltage for initializing charge in thephotoelectric converter is applied, in which

the power line is connected to the other of the source and the drain ofthe first transistor.

According to the configuration of Item 4, it is possible to use a resetcontrol signal in order to reduce the area of the depletion region inthe surface of the semiconductor substrate.

Item 5

The imaging device according to any one of Items 1 to 4, in which thecontact plug is at least a part of a connector that electricallyconnects the semiconductor substrate and the photoelectric converter toeach other.

According to the configuration of Item 5, it is possible to reduce noisein a charge storage region, the noise resulting from a dark current.

Item 6

The imaging device according to any one of Items 1 to 5, in which thewire structure includes a wire that connects the first control electrodeand the second control electrode to each other.

According to the configuration of Item 6, it is possible to apply acommon control voltage to the first control electrode and the secondcontrol electrode during operation of the imaging device.

Item 7

The imaging device according to any one of Items 1 to 6, furtherincluding a second transistor that includes the second control electrodeas a gate electrode and the impurity region as one of a source and adrain.

According to the configuration of Item 7, it is possible to increase anon-state current in the reset transistor.

Item 8

The imaging device according to any one of Items 1 to 4, furtherincluding a second transistor that includes the second control electrodeas a gate electrode and the impurity region as one of a source and adrain, in which

the other of the source and the drain of the first transistor iselectrically connected to the photoelectric converter.

According to the configuration of Item 8, it is possible to reduce aleak current at a reset drain node.

Item 9

An imaging device including a plurality of unit pixel cells, in whicheach of the plurality of unit pixel cells includes

a semiconductor substrate including a first region having a firstconductivity type and an impurity region having a second conductivitytype, the impurity region being formed in the first region,

a photoelectric converter disposed above the semiconductor substrate,

a wire structure disposed between the semiconductor substrate and thephotoelectric converter, the wire structure including a contact plugthat is connected to the impurity region, and

a first transistor that includes a first gate electrode having anopening in the middle, in which

the first transistor includes the impurity region as one of a source anda drain, in which at least a part of the impurity region is located inthe surface of the semiconductor substrate, and in which

the contact plug is connected to the impurity region inside the openingof the first gate electrode.

According to the configuration of Item 9, it is possible to reduce thearea of a depletion region in the surface of the semiconductorsubstrate.

Item 10

The imaging device according to Item 9, in which

the impurity region includes a low-concentration region where theimpurity concentration is relatively low and a high-concentration regiondisposed within the low-concentration region, and in which

the contact plug is connected to the high-concentration region.

According to the configuration of Item 10, it is possible to reduce acontact resistance.

Item 11

The imaging device according to Item 9 or 10, further including a powerline with which a reset voltage for initializing charge in thephotoelectric converter is applied, in which

the power line is connected to the other of the source and the drain ofthe first transistor.

According to the configuration of Item 11, it is possible to use a resetcontrol signal in order to reduce the area of the depletion region inthe surface of the semiconductor substrate.

Item 12

The imaging device according to any one of Items 9 to 11, in which thecontact plug is at least a part of a connector that electricallyconnects the semiconductor substrate and the photoelectric converter toeach other.

According to the configuration of Item 12, it is possible to reducenoise in a charge storage region, the noise resulting from a darkcurrent.

Item 13

The imaging device according to any one of Items 9 to 11, furtherincluding a second transistor that includes one of a source and a drainthat is electrically connected to the photoelectric converter, in which

the contact plug is electrically connected to the other of the sourceand the drain of the second transistor.

According to the configuration of Item 13, it is possible to reduce aleak current at a reset drain node.

Embodiments of the present disclosure will be described below in detailwith reference to the drawings. It should be noted that each of thefollowing embodiments illustrates a general or specific example. Thenumerals, shapes, materials, components, the arrangement and connectionof components, steps, the order of steps, and the like described in thefollowing embodiments are exemplary and should not limit the presentdisclosure. Various aspects described herein may be combined as long asno contradiction arises. In addition, components that are not includedin the independent claim indicating the most generic concept aredescribed as optional components in the following embodiments. In thefollowing description, the components having substantially the samefunctions are denoted by the same reference numerals and may be omittedfrom illustration.

First Embodiment

FIG. 1 illustrates an exemplary circuit configuration of an imagingdevice according to a first embodiment of the present disclosure. Animaging device 100 illustrated in FIG. 1 includes a pixel array PAincluding a plurality of unit pixel cells 10 and peripheral circuitsincluding load circuits 42, column signal processing circuits 44, avertical scanning circuit 46, a horizontal signal reading circuit 48,and the like. In the exemplary configuration illustrated in FIG. 1, thepixel array PA includes the plurality of unit pixel cells 10 arranged ina matrix. The plurality of unit pixel cells 10 are one-dimensionally ortwo-dimensionally arrayed so as to form an imaging region(photosensitive region). For simplicity of the drawing, FIG. 1illustrates four of the unit pixel cells 10 arranged in two rows and twocolumns among the plurality of unit pixel cells 10 arranged in a matrix.It is needless to say that the number and arrangement of the unit pixelcells 10 in the pixel array PA are not limited to those in this example.For example, the unit pixel cells 10 may be one-dimensionally arrayed.In this case, the imaging device 100 can be used as a line sensor.

As will be described later in detail, the unit pixel cells 10 generallyinclude photoelectric converters 12 and signal detecting circuits 14that detect signals generated by the photoelectric converters 12. Thesignal detecting circuits 14 are formed on a semiconductor substrate,and the photoelectric converters 12 are disposed above the semiconductorsubstrate. That is, a stacked imaging device is exemplified here as theimaging device 100. It should be noted that the expression “above” and“below” are used herein to express the relative arrangement of thesemiconductor substrate and the photoelectric converters 12 and are notused with the intention of restricting the posture of the imaging device100 at the time of usage. The term “semiconductor substrate” is notlimited to a substrate that is entirely formed of a semiconductor, butmay be an insulation substrate including a semiconductor layer providedon a surface on which an imaging region is to be formed. In addition,the term “surface of the semiconductor substrate” means the outermostsurface of a semiconductor or semiconductor layer included in thesemiconductor substrate. It should be noted that, in the case where, forexample, an oxide film is formed by oxidation of a part of thesemiconductor or semiconductor layer, the surface of the semiconductorsubstrate is defined to be the outermost surface excluding the oxidefilm from the semiconductor or semiconductor layer.

The photoelectric converters 12 in the respective unit pixel cells 10receive incident light and generate positive charge and negative charge(typically hole-electron pairs). As illustrated in FIG. 1, thephotoelectric converters 12 in the respective unit pixel cells 10 areconnected to a storage control line 39, and a predetermined voltage isapplied to the storage control line 39 during operation of the imagingdevice 100. For example, in the case where positive charge is used as asignal load from the positive charge and negative charge generated byphotoelectric conversion, during operation of the imaging device 100,for example, a positive voltage of about 10 V is applied to the storagecontrol line 39. By application of the predetermined positive voltage tothe storage control line 39, from the positive charge and negativecharge generated by photoelectric conversion, positive charge (e.g.,holes) can selectively be stored in charge storage regions. In thefollowing description, an exemplary case will be described in which thepositive charge is used as a signal load from the positive charge andnegative charge generated by photoelectric conversion.

In the exemplary configuration illustrated in FIG. 1, the signaldetecting circuits 14 in the respective unit pixel cells 10 includeamplifier transistors 22 and address transistors 24 (also referred to asrow-selection transistors). The amplifier transistors 22 and the addresstransistors 24 are typically field-effect transistors (FETs) formed onthe semiconductor substrate. The example of using n-channelmetal-oxide-semiconductor (MOS) transistors will be described belowunless otherwise specified.

Gates of the amplifier transistors 22 are electrically connected to therespective photoelectric converters 12. As will be described later, thecharge generated by the photoelectric converters 12 is stored in thecharge storage regions that include charge-storing nodes FD (alsoreferred to as floating diffusion nodes) between the photoelectricconverters 12 and the amplifier transistors 22. Drains of the amplifiertransistors 22 are connected to a power supply line 32 (source followerpower supply) that supplies a predetermined power supply voltage VDD(e.g., about 3.3 V) to the unit pixel cells 10 during operation of theimaging device 100. Sources of the amplifier transistors 22 areconnected to drains of the respective address transistors 24. Theamplifier transistors 22 output signal voltages in accordance with theamount of signal charge generated by the respective photoelectricconverters 12.

Sources of the address transistors 24 are connected to vertical signallines 35. As illustrated in FIG. 1, the vertical signal lines 35 areprovided for the respective columns of the plurality of unit pixel cells10 and are connected to the respective load circuits 42 and therespective column signal processing circuits 44 (also referred to as rowsignal storing circuits). The load circuits 42 form a source followercircuit together with the amplifier transistors 22. Upon reception ofthe power supply voltage VDD applied to the drains, the amplifiertransistors 22 amplify the voltage applied to the gates. In other words,the amplifier transistors 22 amplify signals generated by thephotoelectric converters 12.

Gates of the address transistors 24 are connected to address signallines 34. The address signal lines 34 are provided for the respectiverows of the plurality of unit pixel cells 10 and are connected to thevertical scanning circuit 46 (also referred to as row scanningcircuits). The vertical scanning circuits 46 supply row-selectionsignals to the address signal lines 34, the row-selection signalscontrolling turning on and off of the address transistors 24. Thus,reading-target rows are scanned in the vertical direction (columndirection), whereby the reading-target rows are selected. The verticalscanning circuit 46 controls turning on and off of the addresstransistors 24 via the address signal lines 34, whereby the output ofthe amplifier transistors 22 in the selected unit pixel cells 10 can beread out and transferred to the corresponding vertical signal lines 35.The arrangement of the address transistors 24 is not limited to thearrangement illustrated in the example in FIG. 1, and the addresstransistors 24 may be provided between the drains of the amplifiertransistors 22 and the power supply line 32.

Signal voltages from the unit pixel cells 10 are output to the verticalsignal lines 35 through the address transistors 24 and input to thecorresponding column signal processing circuits 44. The column signalprocessing circuits 44 perform noise-reduction signal processingtypified by correlated double sampling, analog-to-digital (AD)conversion, and the like. The column signal processing circuits 44 areconnected to the horizontal signal reading circuit 48 (also referred toas a column scanning circuit), and the horizontal signal reading circuit48 reads out signals from the plurality of column signal processingcircuits 44 to a horizontal common signal line 49 in a sequentialmanner.

In the exemplary configuration illustrated in FIG. 1, the signaldetecting circuits 14 include reset transistors 26 having drainsconnected to the charge-storing nodes FD. Gates of the reset transistors26 are connected to reset signal lines 36 that are connected to thevertical scanning circuit 46. The reset signal lines 36 are provided forthe respective rows of the plurality of unit pixel cells 10 as in theaddress signal lines 34. By supplying row-selection signals to theaddress signal lines 34, the vertical scanning circuit 46 can select theunit pixel cells 10 as reset targets in a unit of rows. In addition, byreset signals that control turning on and off of the reset transistors26 supplied to the gates of the reset transistors 26 through the resetsignal lines 36, the reset transistors 26 can be turned on in theselected rows. Upon turning on of the reset transistors 26, potentialsat the charge-storing nodes FD are reset.

In this example, sources of the reset transistors 26 are connected tofeedback lines 53, and the feedback lines 53 are provided for therespective columns of the plurality of unit pixel cells 10. That is, inthis example, the voltages of the feedback lines 53 are applied to thecharge-storing nodes FD as reset voltages that initialize charge in thephotoelectric converters 12. The feedback lines 53 here are provided forthe respective columns of the plurality of unit pixel cells 10 and areconnected to output terminals of inverting amplifiers 50. In thismanner, the peripheral circuits in the imaging device 100 exemplified inFIG. 1 include the plurality of inverting amplifiers 50.

Now one of the columns of the plurality of unit pixel cells 10 will bediscussed (and the following description also applies to the othercolumns). As illustrated in FIG. 1, the inverting input terminal of theinverting amplifier 50 is connected to the vertical signal line 35 inthis column. In addition, the output terminal of the inverting amplifier50 is connected to one or more of the unit pixel cells 10 belonging tothis column via the feedback line 53 in this column. During operation ofthe imaging device 100, a predetermined voltage Vref (e.g., a positivevoltage of 1 V or about 1 V) is applied to the non-inverting inputterminal of the inverting amplifier 50. By selecting one of the one ormore of the unit pixel cells 10 belonging to this column and turning onthe address transistor 24 and the reset transistor 26 therein, afeedback path through which the output of the one or more of the unitpixel cells 10 is negatively fed back can be formed. By forming thefeedback path, the voltage of the vertical signal line 35 converges tothe input voltage Vref applied to the non-inverting input terminal ofthe inverting amplifier 50. In other words, by forming the feedbackpath, the voltage of the charge-storing node FD is reset to a voltage atwhich the voltage of the vertical signal line 35 becomes Vref. As thevoltage Vref, any level of voltage in the range from the ground (0 V) tothe power supply voltage (e.g., 3.3 V) can be used. The invertingamplifier 50 may be referred to as a feedback amplifier. In this manner,the imaging device 100 exemplified in FIG. 1 includes a feedback circuit16 including the inverting amplifier 50 as a component of a feedbackpath.

As is well known, in response to the turning on or off of a transistor,thermal noise called kTC noise is generated. The noise generated inresponse to the turning on or off of the reset transistor is calledreset noise. After the potential of the charge storage region is reset,the reset noise generated in response to turning off of a resettransistor remains in the charge storage region before the signal chargeis stored. However, the reset noise generated in response to turning offof the reset transistor can be reduced by using feedback. Details of thereduction of reset noise by using feedback are described inInternational Publication No. 2012/147302. The contents of InternationalPublication No. 2012/147302 are incorporated herein by reference intheir entirety. In the configuration exemplified in FIG. 1, since thefeedback path is kept formed immediately before the reset transistor 26is turned off, the reset noise generated in response to turning off ofthe reset transistor 26 can be reduced.

Device Configuration of Unit Pixel Cell 10

FIG. 2 schematically illustrates a typical example of a deviceconfiguration of each of the unit pixel cells 10. As illustrated in FIG.2, the unit pixel cell 10 includes a semiconductor substrate 60, thephotoelectric converter 12 disposed above the semiconductor substrate60, and a wire structure 80 disposed between the photoelectric converter12 and the semiconductor substrate 60. As will be described later indetail, the semiconductor substrate 60 includes an n-type impurityregion 67 n serving as a part of the charge storage region.

The amplifier transistor 22, the address transistor 24, and the resettransistor 26, which are included in the above-described signaldetecting circuit 14, are formed on the semiconductor substrate 60. Itshould be noted that FIG. 2 illustrates for brevity the amplifiertransistor 22, the address transistor 24, and the reset transistor 26together in a single cross-sectional view.

An interlayer insulation layer 90 that covers the amplifier transistor22, the address transistor 24, and the reset transistor 26 is disposedon and above the semiconductor substrate 60. The above-described wirestructure 80 is disposed in the interlayer insulation layer 90. In thisexample, the interlayer insulation layer 90 has a stacked-layerstructure including four insulation layers: insulation layers 90 a, 90b, 90 c, and 90 d; the wire structure 80 in the interlayer insulationlayer 90 includes wire layers 80 a, 80 b, 80 c, and 80 d, plugs 82 a, 82b, 82 c, and 82 d, a plug 84, and a contact plug 86. The number ofinsulation layers in the interlayer insulation layer 90 and the numberof wire layers in the wire structure 80 are not limited to theseexamples and can be set arbitrarily.

As illustrated in FIG. 2, the plug 82 d connects a pixel electrode 12 ato the wire layer 80 d, and the plug 82 c connects the wire layer 80 dto the wire layer 80 c. The plug 82 b connects the wire layer 80 c tothe wire layer 80 b, and the plug 82 a connects the wire layer 80 b tothe wire layer 80 a. The wire layers 80 b to 80 d and the plugs 82 a to82 d are typically formed of a metal, such as copper. The plug 84connects the wire layer 80 a to a gate electrode 22 e of the amplifiertransistor 22. The contact plug 86 connects the wire layer 80 a and then-type impurity region 67 n formed in the semiconductor substrate 60.The plug 84, the contact plug 86, and the wire layer 80 a are typicallyformed of polysilicon doped with an n-type impurity.

As illustrated in FIG. 2, the photoelectric converter 12 is disposed onthe interlayer insulation layer 90. The photoelectric converter 12includes the pixel electrode 12 a formed on the interlayer insulationlayer 90, a transparent electrode 12 c formed so as to face the pixelelectrode 12 a, and a photoelectric conversion layer 12 b disposedbetween the pixel electrode 12 a and the transparent electrode 12 c. Thephotoelectric conversion layer 12 b in the photoelectric converter 12 isformed of an organic material or an inorganic material, such asamorphous silicon, and receives incident light through the transparentelectrode 12 c to generate positive charge and negative charge byphotoelectric conversion. The photoelectric conversion layer 12 b istypically formed across the plurality of unit pixel cells 10. Thephotoelectric conversion layer 12 b may include a layer formed of anorganic material and a layer formed of an inorganic material.

The transparent electrode 12 c is formed of a transparent conductivematerial, such as indium tin oxide (ITO), and disposed on alight-receiving surface side of the photoelectric conversion layer 12 b.The transparent electrode 12 c is typically formed across the pluralityof unit pixel cells 10 as in the photoelectric conversion layer 12 b.Although illustration is omitted in FIG. 2, the transparent electrode 12c is connected to the above-described storage control line 39. Duringoperation of the imaging device 100, a bias voltage of about 10 V, forexample, is applied to the transparent electrode 12 c through thestorage control line 39. By increasing the potential of the transparentelectrode 12 c to be higher than the potential of the pixel electrode 12a by using the bias voltage, positive charge (e.g., holes) generated byphotoelectric conversion can be collected as signal charge by using thepixel electrode 12 a.

The pixel electrode 12 a is formed of a metal, such as aluminum orcopper, a metal nitride, polysilicon to which conductivity is providedby being doped with an impurity, or the like. The pixel electrode 12 ais electrically insulated from a pixel electrode 12 a of an adjacent oneof the unit pixel cells 10 by being spatially insulated.

The pixel electrode 12 a is electrically connected to the signaldetecting circuit 14 formed on the semiconductor substrate 60 with aconnector 88 interposed therebetween, the connector 88 including atleast the above-described wire structure 80. In this example, the wirelayers 80 a to 80 d, the plugs 82 a to 82 d, and the contact plug 86 areincluded in the connector 88. The connector 88, the plug 84, the gateelectrode 22 e of the amplifier transistor 22, and the n-type impurityregion 67 n are included in at least a part of the charge storage regionthat stores signal charge.

The semiconductor substrate 60 includes a support substrate 61 and oneor more semiconductor layers formed on the support substrate 61. Here, ap-type silicon (Si) substrate is exemplified as the support substrate61. In the exemplary configuration illustrated in FIG. 2, thesemiconductor substrate 60 includes a p-type semiconductor layer 61 p onthe support substrate 61, an n-type semiconductor layer 62 n on thep-type semiconductor layer 61 p, a p-type semiconductor layer 63 p onthe n-type semiconductor layer 62 n, and a p-type semiconductor layer 65p on the p-type semiconductor layer 63 p. The p-type semiconductor layer63 p is formed on the entire surface of the support substrate 61. Thep-type semiconductor layer 65 p includes a p-type impurity region 66 phaving a relatively low impurity concentration, n-type impurity regions68 an, 68 bn, 68 cn, and 68 dn, and an element isolation region 69.

The p-type semiconductor layer 61 p, the n-type semiconductor layer 62n, the p-type semiconductor layer 63 p, and the p-type semiconductorlayer 65 p are each typically formed by implanting an impurity into anepitaxially grown layer. The p-type semiconductor layer 63 p and thep-type semiconductor layer 65 p have a substantially equal impurityconcentration, which is higher than the impurity concentration in thep-type semiconductor layer 61 p. The n-type semiconductor layer 62 ndisposed between the p-type semiconductor layer 61 p and the p-typesemiconductor layer 63 p suppresses minority carriers flowing from thesupport substrate 61 or a peripheral circuit to the charge storageregion. During operation of the imaging device 100, the potential of then-type semiconductor layer 62 n is controlled via a well contact (notillustrated) provided outside the pixel array PA. In addition, in thisexample, the semiconductor substrate 60 includes a p-type region 64between the p-type semiconductor layer 63 p and the support substrate 61in such a manner as to penetrate the p-type semiconductor layer 61 p andthe n-type semiconductor layer 62 n. The p-type region 64 has a higherimpurity concentration than each of the p-type semiconductor layer 63 pand the p-type semiconductor layer 65 p and electrically connects thep-type semiconductor layer 63 p and the support substrate 61 to eachother. During operation of the imaging device 100, the potential of thep-type semiconductor layer 63 p and the potential of the supportsubstrate 61 are controlled via a substrate contact (not illustrated)provided outside the pixel array PA.

The p-type impurity region 66 p is formed in the p-type semiconductorlayer 65 p, which is a p-well. The above-described n-type impurityregion 67 n is disposed in the p-type impurity region 66 p. Asschematically illustrated in FIG. 2, the n-type impurity region 67 n isformed in the vicinity of the surface of the semiconductor substrate 60and at least a part of the n-type impurity region 67 n is located in thesurface of the semiconductor substrate 60. In the exemplaryconfiguration illustrated in FIG. 2, the n-type impurity region 67 nincludes a first region 67 a and a second region 67 b. The first region67 a in the n-type impurity region 67 n is formed in the second region67 b and has a higher impurity concentration than the second region 67b.

As illustrated in FIG. 2, in this example, the above-described contactplug 86 is connected to the first region 67 a formed in thesemiconductor substrate 60. The first region 67 a in the n-type impurityregion 67 n is not necessarily formed. However, since the first region67 a, which is a contact between the contact plug 86 and thesemiconductor substrate 60, has a relatively high impurityconcentration, the effect of suppressing the expansion of a depletionlayer (suppressing depletion) can be obtained around the contact betweenthe contact plug 86 and the semiconductor substrate 60. By suppressingthe expansion of the depletion layer around the contact between thecontact plug 86 and the semiconductor substrate 60, a leak currentresulting from a crystal defect (may be referred to as an interfacelevel) in the semiconductor substrate 60 at the interface between thecontact plug 86 and the semiconductor substrate 60 can be suppressed. Inaddition, by connecting the contact plug 86 to the first region 67 ahaving a relatively high impurity concentration, the effect of reducinga contact resistance can be obtained.

A junction capacitance formed by a p-n junction between the p-typeimpurity region 66 p and the n-type impurity region 67 n serves as acapacitor that stores at least a part of the signal charge and isincluded in a part of the charge storage region. In the exemplaryconfiguration illustrated in FIG. 2, the second region 67 b having alower impurity concentration than the first region 67 a is disposedbetween the first region 67 a of the n-type impurity region 67 n and thep-type impurity region 66 p. By disposing the second region 67 b havinga relatively low impurity concentration around the first region 67 a,the intensity of an electric field formed by the p-n junction betweenthe n-type impurity region 67 n and the p-type impurity region 66 p canbe relieved. By relieving the intensity of an electric field formed bythe p-n junction, the leak current resulting from the electric fieldformed by the p-n junction is suppressed.

By disposing the p-type semiconductor layer 65 p so as to contact thep-type semiconductor layer 63 p, it is possible to control the potentialof the p-type semiconductor layer 65 p via the p-type semiconductorlayer 63 p during operation of the imaging device 100. By employing sucha configuration, it is possible to dispose a region having a relativelylow impurity concentration (here, the p-type impurity region 66 p andthe second region 67 b in the n-type impurity region 67 n) around thecontact (here, the first region 67 a in the n-type impurity region 67 n)between the contact plug 86 and the semiconductor substrate 60.

The n-type impurity region 67 n formed in the p-type impurity region 66p serves as the drain of the reset transistor 26. In this example, thereset transistor 26 includes at least a part of the n-type impurityregion 67 n, a gate insulation layer 26 g on the semiconductor substrate60, a gate electrode 26 e on the gate insulation layer 26 g, and then-type impurity region 68 an. As schematically illustrated in FIG. 2,when seen from the normal direction of the semiconductor substrate 60,the stacked-layer structure of the gate insulation layer 26 g and thegate electrode 26 e is superposed on at least a part of the n-typeimpurity region 67 n. Although illustration is omitted in FIG. 2, then-type impurity region 68 an is connected to the above-describedfeedback line 53 via a contact plug. The n-type impurity region 68 anserves as the source of the reset transistor 26.

In this example, a control electrode 27 e is disposed so as to face thegate electrode 26 e with the contact plug 86 interposed therebetween. Aninsulation layer 27 g is disposed between the control electrode 27 e andthe semiconductor substrate 60. Typically, the insulation layer 27 g isformed in the same layer as the gate insulation layer 26 g of the resettransistor 26, and the control electrode 27 e is formed in the samelayer as the gate electrode 26 e of the reset transistor 26. The controlelectrode 27 e may or may not be superposed on the n-type impurityregion 67 n. Functions of the control electrode 27 e will be describedlater.

In the exemplary configuration illustrated in FIG. 2, the amplifiertransistor 22 includes a gate insulation layer 22 g on the semiconductorsubstrate 60, the gate electrode 22 e on the gate insulation layer 22 g,and the n-type impurity regions 68 bn and 68 cn formed in thesemiconductor substrate 60. The n-type impurity region 68 bn isconnected to the power supply line 32 (not illustrated in FIG. 2) andserves as the drain of the amplifier transistor 22. Althoughillustration is omitted in FIG. 2, typically, a contact plug thatelectrically connects the n-type impurity region 68 bn and the powersupply line 32 is disposed between the n-type impurity region 68 bn andthe power supply line 32. On the other hand, the n-type impurity region68 cn serves as the source of the amplifier transistor 22. In thisexample, also the element isolation region 69 is provided between then-type impurity region 68 bn serving as the drain of the amplifiertransistor 22 and the n-type impurity region 67 n serving as the drainof the reset transistor 26.

As described above, the plug 84 is connected to the gate electrode 22 e,and the gate electrode 22 e and the pixel electrode 12 a areelectrically connected to each other via the wire layers 80 a to 80 dand the plugs 82 a to 82 d. Accordingly, during operation of the imagingdevice 100, a signal voltage in accordance with the potential of thepixel electrode 12 a is output from the amplifier transistor 22. Thegate electrode 22 e of the amplifier transistor 22 is also connected tothe n-type impurity region 67 n serving as the drain of the resettransistor 26 via the plug 84, the wire layer 80 a, and the contact plug86. Accordingly, by turning on the reset transistor 26, charge stored inthe charge storage region is reset, and also the potential of the gateelectrode 22 e of the amplifier transistor 22 is reset to apredetermined feedback voltage.

The address transistor 24 includes a gate insulation layer 24 g on thesemiconductor substrate 60, a gate electrode 24 e on the gate insulationlayer 24 g, and the n-type impurity regions 68 cn and 68 dn formed inthe semiconductor substrate 60. In this example, by sharing the n-typeimpurity region 68 cn with the amplifier transistor 22, the addresstransistor 24 is electrically connected to the amplifier transistor 22.The n-type impurity region 68 cn serves as the drain of the addresstransistor 24. On the other hand, the n-type impurity region 68 dnserves as the source of the address transistor 24. The n-type impurityregion 68 dn is connected to the vertical signal line 35 (notillustrated in FIG. 2). Although illustration is omitted in FIG. 2,typically, a contact plug that electrically connects the n-type impurityregion 68 dn and the vertical signal line 35 to each other are disposedbetween the n-type impurity region 68 dn and the vertical signal line35.

FIG. 3 illustrates an exemplary layout of elements in each of the unitpixel cells 10. FIG. 3 schematically illustrates the arrangement ofelements (the amplifier transistor 22, the address transistor 24, thereset transistor 26, and the like) formed on the semiconductor substrate60 when seen from the normal direction of the semiconductor substrate60. In the exemplary configuration illustrated in FIG. 3, the elementisolation region 69 for electrical isolation from the signal detectingcircuit 14 in another one of the unit pixel cells 10 is formed aroundthe set of the amplifier transistor 22 and the address transistor 24 andaround the reset transistor 26. The element isolation region 69 is, forexample, a p-type impurity-diffused region.

In this example, the amplifier transistor 22 and the address transistor24 are linearly disposed in the column direction (the vertical directionin FIG. 3). In addition, the control electrode 27 e and the gateelectrode 26 e of the reset transistor 26 are linearly disposed alongthe column direction. If the unit pixel cell 10 is cut along line II-IIin FIG. 3, the cross-sectional view illustrated in FIG. 2 can beobtained. It should be noted that the term “row direction” herein meansthe direction in which a row extends and that the term “columndirection” herein means the direction in which a column extends. Forexample, the vertical direction in FIG. 1 is the column direction, andthe horizontal direction in FIG. 1 is the row direction.

As illustrated in FIG. 3, in this example, the contact plug 86 isdisposed between the control electrode 27 e and the gate electrode 26 eof the reset transistor 26. In other words, a part of the n-typeimpurity region 67 n formed in the semiconductor substrate 60 contactingthe contact plug 86, i.e., the first region 67 a, is located between thecontrol electrode 27 e and the gate electrode 26 e of the resettransistor 26. As will be described later, by disposing the controlelectrode 27 e so as to face the gate electrode 26 e of the resettransistor 26 with the first region 67 a interposed therebetween andcontrolling the potential of the control electrode 27 e, a leak currentresulting from a crystal defect can be suppressed.

In the exemplary configuration illustrated in FIG. 3, the controlelectrode 27 e and the gate electrode 26 e of the reset transistor 26are connected to each other via a signal line 38 that is connected tothe reset signal line 36. Accordingly, during operation of the imagingdevice 100, the same reset signal can be supplied to the controlelectrode 27 e and the gate electrode 26 e. The reset signal line 36 andthe signal line 38 connecting the control electrode 27 e and the gateelectrode 26 e may be components of the wire structure 80. The resetsignal line 36 and the address signal line 34 that extend in the rowdirection are typically components of the wire layer 80 b (see FIG. 2).

It should be noted that the power supply line 32 typically extends inthe column direction. By forming the power supply line 32 in such amanner as to extend in the column direction, it is possible to reduce avoltage drop in the power supply line 32 compared with the case wherethe power supply line 32 is formed in such a manner as to extend in therow direction. This is because, in the case where the power supply line32 is formed in such a manner as to extend in the row direction, sincethe unit pixel cells 10 are selected in a unit of rows at the time ofreading out signals, an amount of current large enough to drive all ofthe unit pixel cells 10 in a single row has to be supplied to a singlebranch of the power supply line 32. If the power supply line 32 isformed in such a manner as to extend in the column direction, the amountof current to be supplied to a certain branch of the power supply line32 is small enough to drive a single unit pixel cell 10 in a certain rowthat is selected from among the plurality of rows.

Next, the size of the depletion layer that is controlled by controllingthe voltage to be applied to the control electrode 27 e and the gateelectrode 26 e will be described with reference to FIG. 4 and FIG. 5.The following description assumes that the threshold voltage of thereset transistor 26 is 0.5 V.

Both of FIG. 4 and FIG. 5 schematically illustrate an enlarged crosssection of each of the unit pixel cells 10 in the vicinity of the resettransistor 26. FIG. 4 illustrates a state where 0 V is applied to thecontrol electrode 27 e and the gate electrode 26 e. FIG. 5 illustrates astate where a negative voltage Vn (Vn<0) is applied to the controlelectrode 27 e and the gate electrode 26 e. In FIG. 4 and FIG. 5,regions defined by broken lines each schematically represent the size ofa depletion layer formed in the p-type semiconductor layer 65 p.Two-directional arrows DR in FIG. 4 and FIG. 5 each indicate the widthof the depletion layer in the surface of the semiconductor substrate 60.

At the time of imaging by using the imaging device 100, exposure isperformed, that is, signal charge is stored in the charge storageregion, while the reset transistor 26 is turned off. That is, whensignal charge is stored in the charge storage region, a voltage lowerthan or equal to the threshold voltage of the reset transistor 26 isapplied to the gate electrode 26 e of the reset transistor 26 throughthe reset signal line 36. For example, in the state where 0 V is appliedto the gate electrode 26 e of the reset transistor 26 (FIG. 4), thereset transistor 26 remains off. In this example, since the gateelectrode 26 e of the reset transistor 26 and the control electrode 27 eare connected to each other via the signal line 38, 0 V is also appliedto the control electrode 27 e.

At this time, the depletion layer in the semiconductor substrate 60expands to, in addition to the vicinity of the interface between then-type impurity region 67 n and the p-type impurity region 66 p and thevicinity of the interface between the n-type impurity region 68 an andthe p-type semiconductor layer 65 p, portions below the gate electrode26 e of the reset transistor 26 and the control electrode 27 e. Asschematically illustrated by the two-directional arrows DR in FIG. 4,portions of the depletion layer appearing on the surface of thesemiconductor substrate 60 extend from a portion below the gateelectrode 26 e to the vicinity of the contact plug 86 and extend from aportion below the control electrode 27 e to the vicinity of the contactplug 86.

In this case, when the voltage applied to the reset signal line 36 isdecreased, as schematically illustrated in FIG. 5, the depletion layeris recessed from below the gate electrode 26 e of the reset transistor26 and the control electrode 27 e. In addition, each of the widths DR ofthe portions of the depletion layer appearing on the surface of thesemiconductor substrate 60 is reduced around the contact plug 86. Thisis because positive carriers (holes) are stored below the gate electrode26 e and the control electrode 27 e as a result of application of anegative voltage to the gate electrode 26 e and the control electrode 27e. The voltage Vn at this time may be, for example, about −2 V.

In the above manner, by disposing the control electrode 27 e so as toface the gate electrode 26 e with the contact plug 86 interposedtherebetween and controlling the voltage to be applied to the gateelectrode 26 e and the control electrode 27 e, it is possible to reducethe widths DR of the portions of the depletion layer appearing on thesurface of the semiconductor substrate 60 around the contact plug 86. Asa result, the effect of suppressing a leak current resulting from acrystal defect can be obtained, and noise in the charge storage regionis reduced. The reset transistor 26 is basically turned off during aperiod other than the period for resetting the potential of the chargestorage region, and thus, a control signal for controlling a resetoperation can be used to reduce the area of the depletion layer.

In the element layout described with reference to FIG. 3, when seen inthe normal direction of the surface of the semiconductor substrate 60,each of the gate electrode 26 e and the control electrode 27 e has arectangular contour. However, the contour of each of the gate electrode26 e and the control electrode 27 e is not limited to this example. Whenseen in the normal direction of the surface of the semiconductorsubstrate 60, as long as the contact between the contact plug 86 and thesemiconductor substrate 60 (in this example, the contact between thecontact plug 86 and the first region 67 a) is located between the gateelectrode 26 e and the control electrode 27 e, the effect of suppressinga leak current can be obtained. It should be noted that it is useful todispose the gate electrode 26 e and the control electrode 27 e atpositions that are 180° opposite to each other with respect to thecontact between the contact plug 86 and the semiconductor substrate 60in order to reduce the widths of the portions of the depletion layerappearing on the surface of the semiconductor substrate 60. In otherwords, by disposing the control electrode 27 e and the gate electrode 26e so as to be symmetric about the contact between the contact plug 86and the semiconductor substrate 60 as illustrated in FIG. 3, the widthsof the portions of the depletion layer appearing on the surface of thesemiconductor substrate 60 can be more effectively reduced.

When seen in the normal direction of the surface of the semiconductorsubstrate 60, a side facing the control electrode 27 e among the sidesdefining the contour of the gate electrode 26 e and a side facing thegate electrode 26 e among the sides defining the contour of the controlelectrode 27 e do not have to be strictly parallel to each other. Thesesides do not have to be strictly straight either. The sides defining thecontour of the gate electrode 26 e and the sides defining the contour ofthe control electrode 27 e are typically meandering when seen under amicroscope.

In this embodiment, the p-type impurity region 66 p exemplifies a firstregion according to an embodiment of the present disclosure, the n-typeimpurity region 67 n exemplifies a second region, the portion where thep-type impurity region 66 p is exposed on the surface of thesemiconductor substrate 60 exemplifies a first area, the portion wherethe n-type impurity region 67 n is exposed on the surface of thesemiconductor substrate 60 exemplifies a second area, the second region67 b exemplifies a third region, the first region 67 a exemplifies afourth region, and the contact plug 86 exemplifies a contact plug.

In addition, the reset transistor 26 exemplifies a first transistoraccording to an embodiment of the present disclosure, the gateinsulation layer 26 g exemplifies a first insulation layer, the gateelectrode 26 e exemplifies a first electrode, the insulation layer 27 gexemplifies a second insulation layer, the control electrode 27 eexemplifies a second electrode, the signal line 38 exemplifies a wire,and the feedback line 53 exemplifies a line.

Modification of First Embodiment

FIG. 6 illustrates a unit pixel cell 10A according to a modification ofthe first embodiment. FIG. 7 schematically illustrates an enlarged crosssection of the unit pixel cell 10A in the vicinity of the resettransistor 26. In the unit pixel cell 10 illustrated in FIG. 3, a commonvoltage is applied to the gate electrode 26 e and the control electrode27 e. In contrast, in the unit pixel cell 10A illustrated in FIG. 6,different voltages can be independently applied to the gate electrode 26e and the control electrode 27 e.

In the exemplary configuration illustrated in FIG. 6, the reset signalline 36 is connected to the gate electrode 26 e of the reset transistor26. On the other hand, a depletion layer control line 37 is connected tothe control electrode 27 e. The depletion layer control line 37 is, forexample, connected to the vertical scanning circuit 46 (see FIG. 1). Byconnecting different signal lines to the gate electrode 26 e and thecontrol electrode 27 e, during operation of the imaging device 100,voltages applied to the gate electrode 26 e and the control electrode 27e can be independently controlled.

FIG. 7 schematically illustrates the state where a negative voltage Vn1and a negative voltage Vn2 (Vn2≠ Vn1) are applied to the gate electrode26 e and the control electrode 27 e, respectively. In this example, avoltage lower than the voltage to be applied to the gate electrode 26 eis applied to the control electrode 27 e. That is, Vn2<Vn1 is satisfiedin this example. In this case, the density of carriers (holes in thiscase) is higher below the control electrode 27 e, to which a lowervoltage is applied, than that below the gate electrode 26 e.Accordingly, the effect of reducing the widths of portions of thedepletion layer appearing on the surface of the semiconductor substrate60 can be stronger in a portion close to the control electrode 27 e thanin a portion close to the gate electrode 26 e. As schematicallyillustrated in FIG. 7, in this example, a width DR2 of a portion of thedepletion layer in the portion close to the control electrode 27 e isless than a width DR1 of a portion of the depletion layer in the portionclose to the gate electrode 26 e. In this manner, also by applying anegative voltage to the control electrode 27 e, the negative voltagebeing different from the voltage applied to the gate electrode 26 e, thewidths of the portions of the depletion layer appearing on the surfaceof the semiconductor substrate 60 can be reduced. Accordingly, a leakcurrent resulting from a crystal defect can be suppressed.

In the above manner, the gate electrode 26 e and the control electrode27 e do not have to have the same potential during operation of theimaging device 100. By connecting different signal lines to the gateelectrode 26 e and the control electrode 27 e, a desired voltage can beapplied to the control electrode 27 e regardless of the turning on andoff of the reset transistor 26. For example, it is possible to performcontrol in such a manner that a negative voltage is kept applied to thecontrol electrode 27 e during operation of the imaging device 100.

FIG. 8 illustrates a unit pixel cell 10B according to anothermodification of the first embodiment. The unit pixel cell 10Billustrated in FIG. 8 differs from the unit pixel cell 10 illustrated inFIG. 3 in that the unit pixel cell 10B includes two reset transistors,which are the reset transistor 26 and a reset transistor 28, sharing thedrain.

In the exemplary configuration illustrated in FIG. 8, the second resettransistor, which is the reset transistor 28, and the reset transistor26 are formed to be symmetrical about the contact plug 86. That is, inthis example, when seen in the normal direction of the surface of thesemiconductor substrate 60, the contact between the contact plug 86 andthe semiconductor substrate 60 is located between the gate electrode 26e of the reset transistor 26 and a gate electrode 28 e of the resettransistor 28.

Both of the gate electrode 26 e of the reset transistor 26 and the gateelectrode 28 e of the reset transistor 28 are superposed on at least apart of the n-type impurity region 67 n. The reset transistor 26 and thereset transistor 28 share the n-type impurity region 67 n as the drains.The reset transistor 28 includes an n-type impurity region 68 en as thesource. The n-type impurity region 68 en is connected to the feedbackline 53 like the n-type impurity region 68 an does. As illustrated inFIG. 8, in this example, both of the gate electrode 26 e of the resettransistor 26 and the gate electrode 28 e of the reset transistor 28 areconnected to the reset signal line 36, and a common reset signal isapplied thereto during operation of the imaging device 100.

FIG. 9 schematically illustrates an enlarged cross section of the unitpixel cell 10B in the vicinity of the reset transistor 26 and the resettransistor 28. As schematically illustrated in FIG. 9, the resettransistor 28 includes a gate insulation layer 28 g on the semiconductorsubstrate 60, the gate electrode 28 e on the gate insulation layer 28 g,the n-type impurity region 67 n as the drain, and the n-type impurityregion 68 en as the source. In this example, a depletion layer is formedalso in the vicinity of the interface between the n-type impurity region68 en and the p-type semiconductor layer 65 p.

FIG. 9 schematically illustrates a state where a negative voltage Vn isapplied to the gate electrode 26 e of the reset transistor 26 and thegate electrode 28 e of the reset transistor 28. As schematicallyillustrated in FIG. 9, by applying the negative voltage Vn to the gateelectrode 28 e of the reset transistor 28, as in the gate electrode 26 eof the reset transistor 26, positive carriers (holes) can be storedbelow the gate electrode 28 e of the reset transistor 28. Accordingly,the depletion layer can be recessed from below the gate electrode 28 e.That is, the gate electrode 28 e of the reset transistor 28 can servelike the above-described control electrode 27 e.

By the gate electrode 28 e of the reset transistor 28 serving like thecontrol electrode 27 e, the widths DR of the portions of the depletionlayer appearing on the surface of the semiconductor substrate 60 arereduced. As a result, the effect of suppressing a leak current resultingfrom a crystal defect can be obtained. In this manner, the resettransistor 26 and the reset transistor 28 may be disposed so as to faceeach other with the contact plug 86 interposed therebetween. Bydisposing the two reset transistors 26 and 28 that operate in parallelwithin the unit pixel cell 10B, the effect of increasing the on-statecurrent can also be obtained.

In this embodiment, the reset transistor 26 exemplifies a firsttransistor according to an embodiment of the present disclosure, and thereset transistor 28 exemplifies a second transistor.

Second Embodiment

FIG. 10 illustrates an exemplary layout of elements in a unit pixel cell20 according to a second embodiment of the present disclosure. Thesecond embodiment differs from the first embodiment mainly in that thegate electrode of a reset transistor according to the second embodimenthas such a shape as to surround the contact plug 86.

In the exemplary configuration illustrated in FIG. 10, the unit pixelcell 20 includes a reset transistor 26D including a ring-shaped gateelectrode 26De. As illustrated in FIG. 10, the gate electrode 26Deincludes an opening AP1 in the middle. As illustrated in FIG. 10, thecontact plug 86 is connected to the n-type impurity region 67 n in thesemiconductor substrate 60 inside the opening AP1 of the gate electrode26De.

The term “ring-shaped” herein includes, not only a shape of a circularring, but also a general shape including an opening in plan view. Thecontour of the ring shape is not limited to a circle and may be anellipse, a triangle, a square, a polygon, an indefinite shape, or thelike. Similarly, the shape of the opening is not limited to a circle andmay be an ellipse, a triangle, a square, a polygon, an indefinite shape,or the like. The contour of the ring shape and the shape of the openingdo not have to be the same. In addition, the ring shape is not limitedto a shape defined by a closed curve and may include a portion thatlinks the inside of the opening to the outside thereof. Therefore, theterm “ring-shaped” herein is to be interpreted as including c-shaped,for example.

In this example, when seen in the normal direction of the surface of thesemiconductor substrate 60, the opening AP1 is rectangular. The shape ofthe opening AP1 when seen in the normal direction of the surface of thesemiconductor substrate 60 may be circular, for example. If the shape ofthe opening AP1 is closer to a circle, it is possible to moreeffectively reduce the widths of portions of the depletion layerappearing on the surface of the semiconductor substrate 60 around thecontact plug 86 that is surrounded by the gate electrode 26De. In orderto reduce the size of the pixel, it is useful if the shape of theopening AP1 is close to a circle because it is easy to reduce the areaof the gate electrode 26De itself. In the above manner, the shape of theopening formed in the gate electrode is not limited to a rectangle.

FIG. 11 schematically illustrates an enlarged cross section of the unitpixel cell 20 in the vicinity of the reset transistor 26D. A gateinsulation layer 26Dg disposed between the gate electrode 26De and thesemiconductor substrate 60 is formed to be ring-shaped like the gateelectrode 26De is, and includes an opening at a portion superposed onthe opening AP1 of the gate electrode 26De. As schematically illustratedin FIG. 11, the n-type impurity region 67 n includes an exposed portionin the opening AP1.

FIG. 11 illustrates a state where a negative voltage Vn is applied tothe gate electrode 26De. As schematically illustrated in FIG. 11, evenif the control electrode 27 e is omitted and the ring-shaped gateelectrode 26De is used, as in the first embodiment, it is possible toreduce the widths DR of the depletion layer formed in the surface of thesemiconductor substrate 60. By making the shape of the gate electrode26De of the reset transistor 26D so as to surround the contact betweenthe contact plug 86 and the semiconductor substrate 60, it is possibleto reduce the area of the whole depletion layer formed in the vicinityof the surface of the semiconductor substrate 60 around the contact plug86.

FIG. 12 illustrates exemplary results of measurement of dark currentsobtained by using different gate structures of reset transistors. Thehorizontal axis of the graph illustrated in FIG. 12 indicates the levelof voltage applied to a gate electrode of a reset transistor, and a leftpart indicates application of a negative voltage having a greaterabsolute value. The vertical axis of the graph illustrated in FIG. 12indicates, on a logarithmic scale, the amount of dark current betweenthe charge storage region and the semiconductor substrate.

Here, as gate structures A, B, and C, the electrode structuresillustrated in FIGS. 13, 14, and 15 are employed, respectively. Theelectrode structure illustrated in FIG. 13 (gate structure A) is anelectrode structure according to a comparative example in which thecontrol electrode 27 e is not provided. The electrode structureillustrated in FIG. 14 (gate structure B) is an electrode structure thatis the same as or similar to the electrode structure described withreference to FIG. 3 and includes the control electrode 27 e and the gateelectrode 26 e that are formed so as to face each other with the contactplug 86 interposed therebetween and are electrically connected to eachother. The electrode structure illustrated in FIG. 15 (gate structure C)is an electrode structure that is the same as or similar to theelectrode structure described with reference to FIG. 10, and the contactplug 86 is located inside of the opening AP1 of the ring-shaped gateelectrode 26De. Two-directional arrows da, db, and dc in FIGS. 13, 14,and 15 each indicate a distance between the gate electrode of the resettransistor and the contact plug 86. Here, da<db<dc is satisfied.Accordingly, if voltage is not applied to the gate electrode, the areasof portions of the depletion layer in the vicinity of the surface of thesemiconductor substrate 60, the portions appearing around the contactplug 86, may be considered to satisfy the following: gate structureA<gate structure B<gate structure C.

However, by setting the gate voltage to a negative voltage, as can beseen from FIG. 12, the amount of dark current is less in the gatestructure B and the gate structure C than in the gate structure A. Thisis because, in the gate structure B and the gate structure C, sincepositive carriers (holes) are stored below the gate electrode (gateelectrode 26 e or 26De) and below the control electrode 27 e, the areasof the portions of depletion layer appearing on the surface of thesemiconductor substrate 60 are reduced, the depletion layer being formedin the semiconductor substrate 60.

As can be seen from FIG. 12, in a region where the gate voltage islower, the gate structure C achieves a stronger effect of reducing thedark current than the gate structure B. This is because the area of thedepletion layer is reduced in two directions toward the contact plug 86in the gate structure B, whereas the area of the depletion layer isreduced in four directions toward the contact plug 86 in the gatestructure C. It should be noted that it is easy to reduce the size ofthe pixel in the configuration in which two electrodes (the controlelectrode 27 e and the gate electrode 26 e in this example) are disposedso as to face each other with the contact plug 86 interposedtherebetween as in the gate structure B.

In the example described with reference to FIG. 10 and FIG. 11, the gateelectrode 26De has such a shape as to surround the contact plug 86 infour directions. Accordingly, it is possible to more effectively reducethe area of the depletion layer around the contact plug 86 than in thecase where the control electrode 27 e and the gate electrode 26 e aredisposed so as to face each other. As a result, it is possible to moreeffectively suppress a leak current resulting from a crystal defect.

The gate electrode 26De according to this embodiment exemplifies a thirdelectrode according to an embodiment of the present disclosure.

Third Embodiment

FIG. 16 illustrates an exemplary circuit configuration of a unit pixelcell in an imaging device according to a third embodiment of the presentdisclosure. A unit pixel cell 30 illustrated in FIG. 16 differs from theunit pixel cell 10 illustrated in FIG. 1 mainly in that a signaldetection circuit 15 in the unit pixel cell 30 further includes a firstcapacitor 51, a second capacitor 52, and a feedback transistor 56.

In the exemplary configuration illustrated in FIG. 16, the signaldetection circuit 15 includes the feedback transistor 56 connectedbetween the source of the reset transistor 26 and the feedback line 53.The gate of the feedback transistor 56 is connected to a feedbackcontrol line 58. The feedback control line 58 is connected to thevertical scanning circuit 46 (see FIG. 1), for example, and the gatevoltage of the feedback transistor 56 is controlled by using thevertical scanning circuit 46 during operation of the imaging device 100.

The signal detection circuit 15 includes the first capacitor 51connected between the source and the drain of the reset transistor 26.The first capacitor 51 has a relatively low capacitance. In addition,the signal detection circuit 15 includes the second capacitor 52including one electrode connected to a node between the reset transistor26 and the feedback transistor 56. The second capacitor 52 has a highercapacitance than the first capacitor 51. The second capacitor 52 and thefeedback transistor 56 can serve as a resistor-capacitor (RC) filtercircuit.

As illustrated in FIG. 16, the other electrode of the second capacitor52 is connected to a sensitivity adjusting line 54. The sensitivityadjusting line 54 is connected to the vertical scanning circuit 46 (seeFIG. 1), for example, and the potential of the sensitivity adjustingline 54 is set to 0 V (reference potential), for example, duringoperation of the imaging device 100. In the following description, anode between the reset transistor 26 and the second capacitor 52 may bereferred to as a reset drain node RD.

In the third embodiment, by controlling the gate voltage of the feedbacktransistor 56, a feedback path by which the output of the unit pixelcell 30 is negatively fed back is formed. As will be described later, byforming the feedback path, kTC noise generated in response to theturning off of the reset transistor 26 can be cancelled.

In order to reduce noise, it is useful if a leak current in the resetdrain node RD can be reduced in the circuit configuration in which thefeedback transistor 56 is connected between the reset transistor 26 andthe feedback line 53. The leak current at the reset drain node RD can bereduced by applying the above-described electrode structure to the resetdrain node RD like the charge-storing node FD.

FIG. 17 illustrates an exemplary device configuration of the unit pixelcell 30 illustrated in FIG. 18. A semiconductor substrate 70 illustratedin FIG. 17 includes a p-type semiconductor layer 75 p formed on thep-type semiconductor layer 63 p. As schematically illustrated in FIG.17, the p-type semiconductor layer 75 p includes the p-type impurityregion 66 p and a p-type impurity region 76 p. The p-type impurityregion 76 p may have substantially the same impurity concentration asthe p-type impurity region 66 p. An n-type impurity region 77 n isformed in the p-type impurity region 76 p. In this example, a part ofthe gate electrode 26 e of the reset transistor 26 is superposed on apart of the n-type impurity region 77 n, and the n-type impurity region77 n serves as the source of the reset transistor 26.

In the illustrated example, the n-type impurity region 77 n includes afirst region 77 a and a second region 77 b as in the n-type impurityregion 67 n. The first region 77 a is disposed in the second region 77 band has a higher impurity concentration than the second region 77 b.

A contact plug 89 is connected to the first region 77 a. Although thefirst region 77 a having a high impurity concentration is notnecessarily formed in the n-type impurity region 77 n, the formation ofthe first region 77 a in the n-type impurity region 77 n produces theeffect of reducing a contact resistance.

The contact plug 89 may be a component of the above-described wirestructure 80. The contact plug 89 electrically connects a wire 81 andthe first region 77 a to each other, the wire 81 being connected to anelectrode of the second capacitor 52 (not illustrated in FIG. 17), theelectrode not being connected to the sensitivity adjusting line 54 (notillustrated in FIG. 17). In this example, the wire 81 is formed in thesame layer as the wire layer 80 a.

In the exemplary configuration illustrated in FIG. 17, the feedbacktransistor 56 includes the n-type impurity region 77 n as one of thesource and the drain. The feedback transistor 56 includes a gateinsulation layer 56 g on the semiconductor substrate 70 and a gateelectrode 56 e on the gate insulation layer 56 g. As schematicallyillustrated in FIG. 17, at least a part of the gate electrode 56 e issuperposed on the n-type impurity region 77 n. Typically, the insulationlayer 27 g, the gate insulation layer 26 g of the reset transistor 26,and the gate insulation layer 56 g of the feedback transistor 56 areformed in the same layer. In addition, the control electrode 27 e, thegate electrode 26 e of the reset transistor 26, and the gate electrode56 e of the feedback transistor 56 are formed in the same layer. Then-type impurity region 68 an formed in the p-type semiconductor layer 75p in this example serves as the other of the source and the drain of thefeedback transistor 56.

FIG. 18 illustrates an exemplary layout of elements in the unit pixelcell 30. In the example illustrated in FIG. 18, as in the configurationdescribed with reference to FIG. 3, the control electrode 27 e and thegate electrode 26 e of the reset transistor 26 are disposed so as toface each other with the contact plug 86 interposed therebetween. If theunit pixel cell 30 is cut along line XVII-XVII in FIG. 18, thecross-sectional view illustrated in FIG. 17 can be obtained.

In this example, the reset transistor 26 and the feedback transistor 56are linearly disposed in the column direction. Therefore, in thisexample, the contact (the first region 77 a in the n-type impurityregion 77 n in this example) between the contact plug 89 and thesemiconductor substrate 70 is located between the gate electrode 26 e ofthe reset transistor 26 and the gate electrode 56 e of the feedbacktransistor 56. In other words, the gate electrode 26 e of the resettransistor 26 and the gate electrode 56 e of the feedback transistor 56are disposed so as to face each other with the contact plug 89interposed therebetween.

Accordingly, by applying a voltage (in particular, a negative voltage)lower than the threshold voltage of each of the reset transistor 26 andthe feedback transistor 56 to the gate electrode 26 e and the gateelectrode 56 e, in accordance with the same mechanism as that describedwith reference to FIG. 4 and FIG. 5, the widths of portions of thedepletion layer appearing around the contact plug 89 between the gateelectrode 26 e and the gate electrode 56 e on the surface of thesemiconductor substrate 70 can be reduced. That is, a leak current atthe reset drain node RD can be suppressed by controlling the gatevoltage applied to the reset transistor 26 and the feedback transistor56. In the above manner, as in the charge-storing node FD, the resetdrain node RD can also employ the electrode structure in which the gateelectrode 26 e of the reset transistor 26 and the gate electrode 56 e ofthe feedback transistor 56 are disposed so as to sandwich the contact(the first region 77 a in the n-type impurity region 77 n in thisexample) between the contact plug 89 and the semiconductor substrate 70in at least two directions.

In this embodiment, the p-type impurity region 76 p exemplifies a firstregion according to an embodiment of the present disclosure, the n-typeimpurity region 77 n exemplifies a second region, the portion where thep-type impurity region 76 p is exposed on the surface of thesemiconductor substrate 70 exemplifies a first area, the portion wherethe n-type impurity region 77 n is exposed on the surface of thesemiconductor substrate 70 exemplifies a second area, the second region77 b exemplifies a third region, the first region 77 a exemplifies afourth region, and the contact plug 89 exemplifies a contact plug.

In addition, the reset transistor 26 exemplifies a first transistoraccording to an embodiment of the present disclosure, the gateinsulation layer 56 g exemplifies a second insulation layer, the gateelectrode 56 e exemplifies a second electrode, and the feedbacktransistor 56 exemplifies a second transistor.

FIG. 19 illustrates a modification of the unit pixel cell according tothe third embodiment. A unit pixel cell 30A illustrated in FIG. 19includes a reset transistor 26D instead of the reset transistor 26, thereset transistor 26D including a ring-shaped gate electrode 26De. Alsoin such a configuration, by disposing the gate electrode 26De and thegate electrode 56 e so as to face each other with the contact plug 89interposed therebetween, the effect of suppressing a leak current at thereset drain node RD can be obtained.

It should be noted that the gate electrode of the reset transistor andthe gate electrode of the feedback transistor in the unit pixel cell donot have to be disposed to be symmetrical about the contact plug 89.FIG. 20 illustrates another modification of the unit pixel cellaccording to the third embodiment. A unit pixel cell 30B illustrated inFIG. 20 includes a reset transistor 26F including a gate electrode 26Dfin which two openings AP1 and AP2 are formed and a feedback transistor56D including a ring-shaped gate electrode 56De.

FIG. 20 illustrates only the periphery of the reset transistor 26F andthe feedback transistor 56D in the unit pixel cell 30B. As illustratedin FIG. 20, the feedback transistor 56D and the reset transistor 26F maybe disposed to be isolated from each other in the unit pixel cell 30B.In this example, the gate electrode 56De of the feedback transistor 56Dhas an opening AP3, and the contact plug 89 is connected to thesemiconductor substrate 70 inside the opening AP3. In this example, ann-type impurity region 69 n serving as the source of the resettransistor 26F is formed in the semiconductor substrate 70. The n-typeimpurity region 69 n is electrically connected to a contact plug 91inside the opening AP2 of the gate electrode 26Df, the contact plug 91being electrically connected to the contact plug 89. The configurationof the n-type impurity region 69 n may be the same as or similar to theconfiguration of the n-type impurity region 67 n. For example, then-type impurity region 69 n may include a region having a relativelyhigh impurity concentration, the region corresponding to the firstregion 67 a in the n-type impurity region 67 n. The contact plug 91 maybe connected to the region having a relatively high impurityconcentration in the n-type impurity region 69 n. By forming the contactbetween the contact plug 91 and the n-type impurity region 69 n insidethe opening AP2, generation of a leak current can be suppressed in theperiphery of the contact.

It should be noted that FIG. 20 illustrates an example in which thereset transistor 26F and the feedback transistor 56D include gateelectrodes having mutually different shapes. As illustrated in FIG. 20,the reset transistor and the feedback transistor do not have to includegate electrodes having the same shape. In addition, the contour of thegate electrode of the reset transistor 26F is not limited to arectangle, which is the shape of the gate electrode 26Df illustrated inFIG. 20. The contour of the gate electrode of the reset transistor 26Fmay be, for example, a shape that is constricted in the middle between aportion surrounding the opening AP1 and a portion surrounding theopening AP2, like a gate electrode 26Dh illustrated in FIG. 21.

Referring back to FIG. 16, a summary of noise cancellation by using theformation of a feedback path will be described. In an imaging devicehaving the exemplary circuit configuration illustrated in FIG. 16, noisecancellation is performed in a unit of pixels in a row.

In the exemplary circuit configuration illustrated in FIG. 16, byturning on the reset transistor 26 and the feedback transistor 56, thevoltage of the feedback line 53 is applied to the charge-storing nodeFD, thereby resetting the potential of the charge-storing node FD. Then,the reset transistor 26 is turned off.

In response to turning off of the reset transistor 26, kTC noise isgenerated. However, during the on-state of the feedback transistor 56, astate where a feedback path is formed is continued, the feedback pathincluding the charge-storing node FD, the amplifier transistor 22, thefeedback transistor 56, and the first capacitor 51 in the path.Accordingly, in the state where the feedback path is formed (this statemay be expressed as a state where the feedback transistor 56 is notturned off), a signal output from the feedback transistor 56 isattenuated in an attenuation circuit formed by using the capacitance ofthe first capacitor 51 and the parasitic capacitance of thecharge-storing node FD. When a value of the capacitance of the firstcapacitor 51 and the parasitic capacitance of the charge-storing node FDare represented as C1 and Cfd, respectively, an attenuation ratio B inthis case is represented as B=C1/(C1+Cfd).

Then, the feedback transistor 56 is turned off. At this time, forexample, the voltage level of the feedback control line 58 is graduallydecreased from a high level to a low level through the threshold voltageof the feedback transistor 56. The gradual decrease in the potential ofthe feedback control line 58 from a high level to a low level graduallyincreases the resistance of the feedback transistor 56. The increase inthe resistance of the feedback transistor 56 narrows the operationbandwidth of the feedback transistor 56 and narrows the frequency domainof a feedback signal.

Upon the voltage of the feedback control line 58 becoming the low level,the feedback transistor 56 is turned off, and the feedback path is nolonger formed. At this time, if the operation bandwidth of the feedbacktransistor 56 is sufficiently lower than the operation bandwidth of theamplifier transistor 22, thermal noise generated in the feedbacktransistor 56 is suppressed by the feedback circuit 16 so as to be1/(1+AB)^(1/2) times as low as the thermal noise without the feedbackcircuit 16. Here, A in the expression is the gain in the feedbackcircuit 16. In the above manner, by turning off the feedback transistor56 in the state where the operation bandwidth of the feedback transistor56 is lower than the operation bandwidth of the amplifier transistor 22,it is possible to reduce kTC noise remaining in the charge-storing nodeFD.

As is clear from the above-described operation, the reset transistor 26and the feedback transistor 56 are basically turned off during a periodfor resetting the potential of the charge storage region and a periodother than noise cancellation by forming the feedback path. Accordingly,it is possible to apply a negative voltage to the gate electrode 26 e ofthe reset transistor 26 and to the gate electrode 56 e of the feedbacktransistor 56 at the time of storing charge and of reading out signals.

Other Modifications

In the above-described embodiments, one or more electrodes are disposedso as to surround a contact plug (the contact plug 86 or 89) in at leasttwo directions, and by controlling voltage applied to the one or moreelectrodes, the carrier concentration below the one or more electrodesis controlled. In addition, in the above-described embodiments, positivecarriers (holes) are stored below the one or more electrodes, therebyreducing areas of portions of a depletion layer appearing on the surfaceof the semiconductor substrate around the contact plug, the depletionlayer being formed in a semiconductor substrate (the semiconductorsubstrate 60 or 70). That is, in the above-described embodiments, theeffect of suppressing a leak current is obtained by reducing the area ofthe depletion layer in the vicinity of the surface of the semiconductorsubstrate in a portion covered with neither a gate electrode nor acontrol electrode. In contrast, in the following modifications, aconfiguration is employed in which it is possible to withdraw theportions of the depletion layer appearing on the surface of thesemiconductor substrate, the depletion layer being formed in thesemiconductor substrate, to a portion below the gate electrode and/orthe control electrode.

FIG. 22 schematically illustrates a cross section of the vicinity of thereset transistor 26 in a unit pixel cell according to a still anothermodification. A unit pixel cell 40 illustrated in FIG. 22 hassubstantially the same cross-sectional configuration as the unit pixelcell 10 described with reference to FIG. 4 and FIG. 5. However, thep-type impurity region 66 p in a semiconductor substrate 71 illustratedin FIG. 22 includes an n-type impurity region 72 n having a relativelyhigh impurity concentration instead of the n-type impurity region 67 n.In this example, the n-type impurity region 72 n includes a secondregion 72 b and a first region 72 a that is formed in the second region72 b and that has a relatively high impurity concentration, and thecontact plug 86 is connected to the first region 72 a.

The second region 72 b in the n-type impurity region 72 n has a higherimpurity concentration than the above-described second region 67 b inthe n-type impurity region 67 n. The impurity concentration of thesecond region 67 b in the n-type impurity region 67 n is in the rangeof, for example, 1×10¹⁶ to 2×10¹⁷/cm³ (“x” indicates multiplication),whereas the impurity concentration of the second region 72 b illustratedin FIG. 22 may be in the range of, for example, about 1×10¹⁸ to5×10¹⁸/cm³. The first region 72 a illustrated in FIG. 22 may have animpurity concentration substantially equal to the impurity concentrationof the above-described first region 67 a in the n-type impurity region67 n. The impurity concentration of the first region 72 a is typically1×10¹⁹/cm³ or higher, and is in the range of, for example, about 1×10¹⁹to 5×10²⁰/cm³. Therefore, the impurity concentration of the n-typeimpurity region 72 n is, for example, 1×10¹⁸/cm³ or higher.

FIG. 22 schematically illustrates a state where a negative voltage Vn isapplied to the control electrode 27 e and the gate electrode 26 e of thereset transistor 26. In the above-described embodiments, the impurityconcentration of the n-type impurity region 67 n in the p-type impurityregion 66 p is set to a relatively low value. Accordingly, when thenegative voltage Vn is applied to the control electrode 27 e and thegate electrode 26 e of the reset transistor 26, positive charge iseasily stored below these electrodes (see FIG. 5). On the other hand, inthe exemplary configuration illustrated in FIG. 22, since the impurityconcentration of the n-type impurity region 72 n is relatively high, theportion of the depletion layer in the vicinity of the surface of thesemiconductor substrate 71, the depletion layer being formed in thesemiconductor substrate 71, is located below the control electrode 27 eand below the gate electrode 26 e as schematically illustrated in FIG.22.

On the surface of the semiconductor substrate 71, the portion on whichan insulation layer (the insulation layer 27 g and the gate insulationlayer 26 g in this example) is disposed may be considered to have fewercrystal defects than the other portions. In the exemplary configurationillustrated in FIG. 22, the portion of the depletion layer in thevicinity of the surface of the semiconductor substrate 71, the depletionlayer being formed in the semiconductor substrate 71, appears below thecontrol electrode 27 e and below the gate electrode 26 e where crystaldefects are fewer. Accordingly, the effect of suppressing a leak currentresulting from a crystal defect can be obtained.

As described above, according to the embodiments of the presentdisclosure, since the influence of a leak current can be suppressed, animaging device capable of high-definition imaging is provided. It shouldbe noted that each of the above-described amplifier transistor 22,address transistor 24, reset transistors 26, 26D, 26F, and 28, and thefeedback transistors 56 and 56D may be an n-channel MOS transistor or ap-channel MOS transistor. In addition, all of the above transistors donot have to be uniquely n-channel MOS transistors or p-channel MOStransistors. For example, in the circuit configuration described withreference to FIG. 1, in the case where each of the amplifier transistor22, the address transistor 24, and the reset transistor 26 is ann-channel MOS transistor and where electrons are used as signal charge,positions of the source and drain in each of the transistors areinterchanged.

An imaging device according to an embodiment of the present disclosureis usefully applied to, for example, an image sensor, a digital camera,and the like. The imaging device according to an embodiment of thepresent disclosure can be used for a medical camera, a robot camera, asecurity camera, a camera used by being installed in a vehicle, or thelike.

What is claimed is:
 1. An imaging device comprising: a semiconductorsubstrate having a surface, the semiconductor substrate including afirst region of a first conductivity type; and a pixel including: aphotoelectric converter; a first transistor including a second region ofa second conductivity type different from the first conductivity type asa source or a drain and a first electrode as a gate, the second regionbeing located in the semiconductor substrate and being adjacent to thefirst region, the first electrode being located above the surface; acontact plug coupled to the second region; and a second electrodelocated above the surface; wherein when seen in a directionperpendicular to the surface, a contact point between the contact plugand the second region is located between the first electrode and thesecond electrode.
 2. The imaging device according to claim 1, whereinthe first electrode covers a first portion of the first region, thesecond electrode covers a second portion of the first region, and eachof the first portion and the second portion is adjacent to the secondregion.
 3. The imaging device according to claim 1, wherein the firstelectrode is coupled to the second electrode.
 4. The imaging deviceaccording to claim 1, wherein the pixel includes a first insulatinglayer between the first electrode and the surface and a secondinsulating layer between the second electrode and the surface, and thefirst insulation layer is in a same layer as the second insulationlayer.
 5. The imaging device according to claim 4, wherein the firstelectrode is in a same layer as the second electrode.
 6. The imagingdevice according to claim 1, wherein the second region includes a thirdregion and a fourth region, an impurity concentration of the fourthregion being greater than an impurity concentration of the third region,and the contact plug is coupled to the fourth region.
 7. The imagingdevice according to claim 1, wherein the contact plug is coupled to thephotoelectric converter.
 8. The imaging device according to claim 1,wherein the pixel includes a second transistor, the second region iscoupled to the photoelectric converter via the second transistor.
 9. Theimaging device according to claim 1, wherein the photoelectric converteris configured to generate signal charge, and the second regionaccumulates at least a part of the signal charge.
 10. The imaging deviceaccording to claim 1, wherein the photoelectric converter is configuredto generate signal charge, and the pixel includes a second transistoroutputting a signal according to an amount of the signal charge, a gateof the second transistor being coupled to the contact plug.
 11. Theimaging device according to claim 1, wherein the photoelectric converteris configured to generate signal charge, and the signal charge flowsthrough the contact plug.
 12. The imaging device according to claim 1,wherein the first electrode and the second electrode constitute a singleelectrode having an opening, and when seen in the direction, the contactpoint is located in the opening.
 13. The imaging device according toclaim 1, wherein the first electrode and the second electrode constitutea single C-shaped electrode, and when seen in the direction, the contactpoint is partially surround by the single C-shaped electrode.
 14. Theimaging device according to claim 1, wherein, when seen in thedirection, the second electrode overlaps the second region.
 15. Theimaging device according to claim 1, wherein the second region has animpurity concentration equal to or greater than 1×10¹⁸/cm³.
 16. Theimaging device according to claim 1, wherein the pixel includes a secondtransistor including the second region as a source or a drain and thesecond electrode as a gate.
 17. The imaging device according to claim16, wherein the first electrode is coupled to the second electrode.